| PART |
Description |
Maker |
| MC600 10FC MC700 EC-600 |
BRITISH STYLE?SEMICONDUCTOR PROTECTION FUSES
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
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| MMBZ4690 MMBZ4691 MMBZ4692 MMBZ4693 MMBZ4694 MMBZ4 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
ZENER DIODES
VOLT SUPP AVX VC120605A150
|
GE Security, Inc.
GE[General Semiconductor]
|
| 192 3883 6033 3856 14589 12375 18062 15242 14340 1 |
KUPFERLEGIERUNG C101 L 1000M ROHR Inhalt pro Packung: 6 Stk.
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
KUPFERLEGIERUNG C101 ROT L 1000M Inhalt pro Packung: 4 Stk.
KUPFERLEGIERUNG C101 ROT L 1000M BRITISH Inhalt pro Packung: 4 Stk.
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating KUPFERLEGIERUNG C101蜇千兆罗尔Inhalt亲Packung沙头角
|
Keystone Electronics, Corp.
|
| 2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification
Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| ATMEGA103-14 |
AVR ?High-performance and Low-power RISC Architecture
Power Consumption when Using Slowly Rising Power Supply
|
ATMEL Corporation
|
| STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
